Published March 12, 2010 | Version v1
Journal article Metadata-only

Nonvolatile memory devices based on few-layer graphene films

Creators

  • 1. Department of Display and Semiconductor Physics, Sejong Campus, Korea University, Chungnam-Do 339-800 (Korea, Republic of)
  • 2. Department of Physics and Astronomy and National Creative Research Initiative Center for Semiconductor Nanorods, Seoul National University, Seoul 151-747 (Korea, Republic of)

Description

We report on the electrical characteristics of few-layer graphene (FLG) field-effect devices with their various thicknesses. In combination with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)], FLG/ferroelectric devices exhibited nonvolatile resistance changes due to a polarization switching of the P(VDF/TrFE) layer. The bistability and retention properties were highly sensitive to the FLG thickness, which is attributed to a charge screening effect in FLG films.

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/21/10/105204

Additional details

Identifiers

DOI
10.1088/0957-4484/21/10/105204;
PII
S0957-4484(10)32555-4;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
21
Journal Issue
10
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43022147
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
FERROELECTRIC MATERIALS; FILMS; FLUORINATED ALIPHATIC HYDROCARBONS; LAYERS; MEMORY DEVICES; NANOSTRUCTURES; POLARIZATION; RETENTION; THICKNESS
Descriptors DEC
DIELECTRIC MATERIALS; DIMENSIONS; HALOGENATED ALIPHATIC HYDROCARBONS; MATERIALS; ORGANIC COMPOUNDS; ORGANIC FLUORINE COMPOUNDS; ORGANIC HALOGEN COMPOUNDS