Published November 28, 2015 | Version v1
Journal article

Perpendicular coercivity enhancement of CoPt/TiN films by nitrogen incorporation during deposition

  • 1. Department of Metallurgy and Ceramics Science, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8552 (Japan)
  • 2. National Institute for Materials Science (NIMS), Sengen 1-2-1, Tsukuba, Ibaraki 305-0047 (Japan)
  • 3. Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, H-1121 Budapest, Konkoly-Thege ut 29-33 (Hungary)

Description

The effect of N incorporation on the structure and magnetic properties of CoPt thin films deposited on glass substrates with TiN seed layers has been investigated. During the deposition of CoPt, introducing 20% N2 into Ar atmosphere promotes the (001) texture and enhances the perpendicular coercivity of CoPt film compared with the film deposited in pure Ar and post-annealed under the same conditions. From the in situ x-ray diffraction results, it is confirmed that N incorporation expands the lattice parameter of CoPt, which favors the epitaxial growth of CoPt on TiN. During the post-annealing process, N releases from CoPt film and promotes the L10 ordering transformation of CoPt

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
118
Journal Issue
20
Journal Page Range
p. 203907-203907.4
ISSN
0021-8979
CODEN
JAPIAU

Optional Information

Notes
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