Published August 5, 1981
| Version v1
Patent
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Integrated circuit structure
Description
The invention describes the fabrication of integrated circuit structures, such as read-only memory components of field-effect transistors, which may be fabricated and then maintained in inventory, and later selectively modified in accordance with a desired pattern. It is claimed that MOS depletion-mode devices in accordance with the invention can be fabricated at lower cost and at higher yields. (U.K.)
Availability note (English)
MF available from INIS under the Report Number.Files
13672084.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- IPC:
- Int. Cl. H01l27/04.
- IPC
- Int. Cl. H01l27/04.
- Patent number
- GB patent document 1594958/A/
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 13672084
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COST; FABRICATION; FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; ION IMPLANTATION; MOS TRANSISTORS; SEMICONDUCTOR STORAGE DEVICES
- Descriptors DEC
- ELECTRONIC CIRCUITS; MEMORY DEVICES; SEMICONDUCTOR DEVICES; TRANSISTORS