Electronic band parameters for zinc-blende Al1-xGaxN

Band-structure calculations are performed for cubic Al1-xGaxN using the empirical pseudopotential method. The band gaps at Γ, X and L points and the electron effective masses of Γ and X valleys are calculated as a function of the gallium fraction x. It is found that there is no significant change in these electronic band parameters on taking into account the alloy disorder. On the basis of a model solid theory, we have calculated the band discontinuities for heterointerfaces between strained Al1-xGaxN and relaxed Al1-yGayN. The latter calculations are extended to the whole range of compositions x and y. The information derived from this investigation will be useful in the design of lattice-mismatched heterostructures in blue-light optoelectronics applications. (author)