Published October 15, 2006 | Version v1
Journal article

Investigation of annealing effects on the structural, magnetic and transport properties of Co/GaAs(0 0 1) thin films

  • 1. University Grant Commission, Department of Atomic Energy Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452017 (India)

Description

Present paper deals with the structural, magnetic and transport studies of as-deposited as well as annealed Co/GaAs(0 0 1) thin film at different temperatures. The X-ray diffraction measurements show oriented growth of as-deposited Co film in the hcp (0 0 2) direction. However, the sample annealed at higher temperatures shows formation of ternary Co2GaAs phase at the interface. Corresponding magnetic and transport measurements show decrement in magnetization and resistivity with annealing temperatures. The observed reductions in magnetization and resistivity values are mainly attributed to the formation of ternary Co2GaAs phase at the interface

Additional details

Identifiers

DOI
10.1016/j.apsusc.2005.11.079;
PII
S0169-4332(05)01633-8;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
252
Journal Issue
24
Journal Page Range
p. 8571-8575
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38104343
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; COBALT; GALLIUM ARSENIDES; HCP LATTICES; INTERFACES; MAGNETIZATION; THIN FILMS; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; HEXAGONAL LATTICES; METALS; PNICTIDES; SCATTERING; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.