Published May 1, 2020 | Version v1
Journal article Metadata-only

Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering

Creators

  • 1. Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 (China)
  • 2. State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 (China)
  • 3. Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 (China)
  • 4. Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing, Beijing 100083 (China)
  • 5. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190 (China)
  • 6. Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124 (China)
  • 7. School of Microelectronics, University of Science and Technology of China, Hefei 230026 (China)
  • 8. School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 (Singapore)
  • 9. Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

Description

Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi 2 Te 3 family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO 2 /Si substrates by magnetron cosputtering. The SiO 2 /Si substrates enable us to electrically tune (Bi 1–x Sbx)2 Te 3 and Cr-doped (Bi 1–x Sbx)2 Te 3 TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/37/5/057301

Additional details

Identifiers

DOI
10.1088/0256-307X/37/5/057301;

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
37
Journal Issue
5
Journal Page Range
[10 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
54074714
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANTIMONY ADDITIONS; BISMUTH TELLURIDES; DOPED MATERIALS; ELECTRONIC STRUCTURE; HALL EFFECT; L-S COUPLING; MAGNETRONS; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPUTTERING; SUBSTRATES; SURFACES; THIN FILMS; THREE-DIMENSIONAL LATTICES
Descriptors DEC
ALLOYS; ANTIMONY ALLOYS; BISMUTH COMPOUNDS; CHALCOGENIDES; COUPLING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; INTERMEDIATE COUPLING; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS