Published 2005
| Version v1
Journal article
Grazing-incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation
Creators
- 1. Forschungszentrum Rossendorf e.V., Inst. of Ion Beam Physics and Materials Research, Dresden (Germany)
- 2. Univ. of Potsdam, Inst. of Physics, Potsdam (Germany)
Description
no abstract available
Additional details
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Volume
- 40
- Journal Issue
- 2
- Journal Page Range
- p. 280
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- Physics since Albert Einstein
- Original Conference Title
- Jahrestagung 2005 der Deutschen Physikalischen Gesellschaft (DPG) im World Year of Physics: Physik seit Albert Einstein
- Acronym
- 2005 annual conference of the German Physical Society (DPG) during the World year of physics
- Dates
- 4-9 Mar 2005
- Place
- Berlin (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 36046225
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DEPTH; DOPED MATERIALS; GERMANIUM ADDITIONS; GERMANIUM IONS; GOLD ADDITIONS; GOLD IONS; ION IMPLANTATION; KEV RANGE 10-100; LAYERS; PHYSICAL RADIATION EFFECTS; SILICON; STRAINS; THICKNESS; X-RAY DIFFRACTION
- Descriptors DEC
- ALLOYS; CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; ELEMENTS; ENERGY RANGE; GERMANIUM ALLOYS; GOLD ALLOYS; IONS; KEV RANGE; MATERIALS; RADIATION EFFECTS; SCATTERING; SEMIMETALS; TRANSITION ELEMENT ALLOYS