Behaviour of impurities under ion implantation of GaAs by selenium

Effect of selenium ion implantation and after implantation annealing on redistribution of sulfur, oxygen and carbon in surface layer of half-insulating gallium arsenide, produced by Czochralski method with liquid insulation, is studied. As a result of selenium implantation and annealing at 1123K for 20 min the above-mentioned elements are redistributed in a thin near-the-surface layer, therewith interaction between elements is observed. Redistribution of considered impurities is affected by radiation-induced defects occurring during implantation