Published March 4, 2009 | Version v1
Journal article

Interaction potential for indium phosphide: a molecular dynamics and first-principles study of the elastic constants, generalized stacking fault and surface energies

  • 1. Materials Theory and Simulation Laboratory, Institute of High Performance Computing, 1 Fusionopolis Way, 16-16 Connexis, 138632 (Singapore)
  • 2. Departamento de Fisica, Universidade Federal de Sao Carlos, Via Washington Luiz km 235, Sao Carlos, Sao Paulo, 13565-905 (Brazil)

Description

Indium phosphide is investigated using molecular dynamics (MD) simulations and density-functional theory calculations. MD simulations use a proposed effective interaction potential for InP fitted to a selected experimental dataset of properties. The potential consists of two- and three-body terms that represent atomic-size effects, charge-charge, charge-dipole and dipole-dipole interactions as well as covalent bond bending and stretching. Predictions are made for the elastic constants as a function of density and temperature, the generalized stacking fault energy and the low-index surface energies.

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/21/9/095002

Additional details

Identifiers

DOI
10.1088/0953-8984/21/9/095002;
PII
S0953-8984(09)89757-9;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
21
Journal Issue
9
Journal Page Range
[8 p.]
ISSN
0953-8984
CODEN
JCOMEL