Published May 2008 | Version v1
Journal article Metadata-only

Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser

Creators

  • 1. Key Laboratory of Photoelectron Technology and Application, Guizhou University Guiyang 550026 (China)
  • 2. Institute of Geochemistry Chinese Academy of Sciences, Guiyang 550003 (China)

Description

Stimulated photoluminescence (PL) emission has been observed from an oxide structure of silicon when optically excited by a radiation of 514nm laser. Sharp twin peaks at 694 and 692nm are dominated by stimulated emission, which can be demonstrated by its threshold behaviour and linear transition of emission intensity as a function of pump power. The oxide structure is formed by laser irradiation on silicon and its annealing treatment. A model for explaining the stimulated emission is proposed, in which the trap states of the interface between an oxide of silicon and porous nanocrystal play an important role

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-1056/17/5/044

Additional details

Identifiers

DOI
10.1088/1674-1056/17/5/044;

Publishing Information

Journal Title
Chinese Physics. B
Journal Volume
17
Journal Issue
5
Journal Page Range
p. 1817-1820
ISSN
1674-1056

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44125156
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ANNEALING; EMISSION SPECTRA; INTERFACES; IRRADIATION; LASER RADIATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; SILICON; SILICON OXIDES; STIMULATED EMISSION; TRAPS
Descriptors DEC
CHALCOGENIDES; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; HEAT TREATMENTS; LUMINESCENCE; MATERIALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RADIATIONS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA