Published September 15, 1992 | Version v1
Journal article Metadata-only

Raman scattering from interface modes in Ga1-xInxSb/InAs superlattices

Creators

  • 1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
  • 2. Engineering Material Department, University of California at Santa Barbara, Santa Barbara, California 93106 (United States)
  • 3. Electrical and Computer Engineering Department, University of California at Santa Barbara, Santa Barbara, California 93106 (United States)

Description

In this study we use Raman scattering from Ga1-xInxSb/InAs grown by molecular-beam epitaxy superlattices to identify and study interface modes. Those modes are localized around the interfaces of the superlattices. We identify three types of longitudinal interface modes; two GaAs-like and one InSb-like. The frequency and the Raman activity of those modes are in good agreement with theoretical calculations. In addition, it is shown that the interface modes can be used to identify the interface composition (InSb or GaAs) for a variety of samples grown under controlled shutter sequences

Additional details

Publishing Information

Journal Title
Physical Review. B, Condensed Matter
Journal Volume
46
Journal Issue
11
Journal Page Range
p. 7200-7203.
ISSN
0163-1829
CODEN
PRBMDO

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
24014410
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ANTIMONIDES; EPITAXY; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; MOLECULAR BEAMS; RAMAN SPECTRA; SUPERLATTICES; THEORETICAL DATA
Descriptors DEC
ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL GROWTH METHODS; DATA; INDIUM COMPOUNDS; INFORMATION; NUMERICAL DATA; PNICTIDES; SPECTRA