Published 1973 | Version v1
Report Restricted

Ultrasonic attenuation in n-GaP and P-InSb at low temperatures

Creators

  • 1. Purdue Univ., Lafayette, Ind. (USA). Dept. of Physics

Description

no abstract available

Availability note (English)

MF available from INIS under the Report Number.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
9 p.
Report number
AED-Conf--73-374-013

Conference

Title
5. international conference on internal friction and ultrasonic attenuation in crystalline solids.
Dates
27 Aug 1973.
Place
Aachen, F.R. Germany.

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
4090968
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANTIMONY ALLOYS; ATTENUATION; BOUND STATE; CHARGE CARRIERS; CHARGE TRANSPORT; COUPLING; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTROMECHANICS; GALLIUM COMPOUNDS; IMPURITIES; INDIUM ALLOYS; INTERMETALLIC COMPOUNDS; LOW TEMPERATURE; MHZ RANGE 01-100; MILLER INDICES; MONOCRYSTALS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOSPHIDES; PIEZOELECTRICITY; SEMICONDUCTOR MATERIALS; ULTRALOW TEMPERATURE; ULTRASONIC WAVES; VERY LOW TEMPERATURE
Descriptors DEC
ALLOYS; CRYSTALS; ELECTRICAL PROPERTIES; ELECTRICITY; FREQUENCY RANGE; MECHANICS; MHZ RANGE; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SOUND WAVES

Optional Information

Notes
3 figs.; 2 tabs.; 29 refs. With abstract.