Published March 2009 | Version v1
Report Metadata-only

Relation between transient current induce MOS devices by heavy-ions and total dose effect

Creators

  • 1. Nihon Univ., Tokyo (Japan)
  • 2. Japan Atomic Energy Agency, Takasaki Advanced Radiation Research Inst., Takasaki, Gunma (Japan)

Description

no abstract available

Part of:
Proceedings of the 21st meeting for tandem accelerators and their associated technologies

Additional details

Publishing Information

Imprint Title
Proceedings of the 21st meeting for tandem accelerators and their associated technologies
Imprint Pagination
180 p.
Journal Page Range
p. 116-118
Report number
JAEA-Conf--2008-012

Conference

Title
21. meeting for tandem accelerators and their associated technologies
Dates
31 Jul - 1 Aug 2008
Place
Takasaki, Gunma (Japan)

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
41053094
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CHARGE DENSITY; CURRENTS; DOSES; GAMMA RADIATION; HEAVY IONS; LAYERS; LEAKAGE CURRENT; MOSFET; OXIDES; RADIATION EFFECTS; SIMULATORS; TRANSIENTS
Descriptors DEC
ANALOG SYSTEMS; CHALCOGENIDES; CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; FUNCTIONAL MODELS; IONIZING RADIATIONS; IONS; MOS TRANSISTORS; OXYGEN COMPOUNDS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Notes
1 ref., 4 figs.