Published March 1992 | Version v1
Journal article Metadata-only

Charge carrier concentration in copper and indium diselenide films

Creators

  • 1. AN SSSR, Leningrad (Russian Federation). Fiziko-Tekhnicheskij Inst.

Description

Concentration variation of charge free carriers in copper and indium diselenide films depending on conditions of their preparation is studied. It is determined that varying evaporation temperature under condensation constant temperature one can change concentration of charge carriers in CuInSe films within wide ranges up to conductivity type conversion

Additional details

Additional titles

Original title (Russian)
Концентрация носителей заряда в пленках диселенида меди и индия

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
28
Journal Issue
3
Journal Page Range
p. 679-681.
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
24005283
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CARRIER DENSITY; CHARGE CARRIERS; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; FILMS; HALL EFFECT; INDIUM SELENIDES; SEMICONDUCTOR MATERIALS
Descriptors DEC
CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SURFACE COATING