Published July 1987
| Version v1
Journal article
On the nature of the ∼ 1.7 eV band in n-GaP luminescence
Creators
- 1. Kishinevskij Politekhnicheskij Inst. (USSR)
Description
n-CaP films doped with Si (up to 5x1018 cm-3) were investigated with the aim of determining the nature of a band with 1.7 eV maximum energy in luminescence spectra. It is shown, that two radiative recombination channels, different in the mechanism, in which the quantum energy differs by the value of state activation energy A (Em ∼ 0.05 eV) participate in 1.7 eV band formation
Additional details
Additional titles
- Original title (Russian)
- О природе полосы ∼ 1.7 эв в люминесценции н-GaP
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 21
- Journal Issue
- 7
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1308-1309
- ISSN
- 0015-3222
- CODEN
- FTPPA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19020022
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- EPITAXY; FILMS; GALLIUM ADDITIONS; GALLIUM PHOSPHIDES; N-TYPE CONDUCTORS; PHOTOLUMINESCENCE; SILICON ADDITIONS; VISIBLE SPECTRA
- Descriptors DEC
- EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; SEMICONDUCTOR MATERIALS; SPECTRA