Published June 1, 1998 | Version v1
Journal article Metadata-only

Reverse current in SI GaAs pixel detectors

Creators

  • 1. CNR, Lecce (Italy). Istituto per lo Studio di Nuovi Materiali per l'Elettronica

Description

A study of the carrier transport mechanism has been carried out on semi-insulating GaAs X-ray detectors. The aim is to analyze the excess current (larger than thermionic values), breakdown mechanisms and non-uniformities of the electric field in actual devices. (orig.)

Additional details

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
410
Journal Issue
1
Journal Page Range
p. 85-91
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
5. international workshop on GaAs detectors and related compounds
Dates
17-20 Jun 1997
Place
Udine (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
29051955
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GALLIUM ARSENIDES; POSITION SENSITIVE DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; GALLIUM COMPOUNDS; MATERIALS; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION DETECTORS; TEMPERATURE RANGE

Optional Information

Notes
14 refs.