Published February 2021
| Version v1
Journal article
Implantation of Mg channeling ions into a GaN substrate
- 1. Hosei University, Research Center of Ion Beam Technology, Koganei, Tokyo (Japan)
- 2. Hosei University, Koganei, Tokyo (Japan)
- 3. Nagoya University, Institute of Materials and Systems for Sustainability, Nagoya, Aichi (Japan)
Description
no abstract available
Additional details
Additional titles
- Original title (Japanese)
- GaN基板へのMgのチャネリングイオン注入
Publishing Information
- Journal Title
- Hosei Daigaku Ion Bimu Kogaku Kenkyusho Hokoku
- Journal Issue
- no.40
- Series
- 雑誌名:法政大学イオンビーム工学研究所報告
- Journal Page Range
- p. 9-11
- ISSN
- 0286-0201
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 52110084
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CATHODOLUMINESCENCE; DEPTH; GALLIUM NITRIDES; ION CHANNELING; ION IMPLANTATION; ION MICROPROBE ANALYSIS; MAGNESIUM IONS; MASS SPECTROSCOPY; SUBSTRATES
- Descriptors DEC
- CHANNELING; CHARGED PARTICLES; CHEMICAL ANALYSIS; DIMENSIONS; EMISSION; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONS; LUMINESCENCE; MICROANALYSIS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; PHOTON EMISSION; PNICTIDES; SPECTROSCOPY
Optional Information
- Notes
- 5 refs., 3 figs.