Published March 1, 2017 | Version v1
Journal article

Sol–gel synthesis and photoluminescence of SiO2–Si:Er3+ nanocomposite films

  • 1. International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology (HUST), No. 1, Dai Co Viet Road, Hanoi 10000 (Viet Nam)
  • 2. Advanced Institute for Science and Technology (AIST), Hanoi University of Science and Technology (HUST), No.1, Dai Co Viet Road, Hanoi 10000 (Viet Nam)

Description

In this work, we report on sol–gel synthesis and photoluminescence of SiO2–Si:Er3+ nanocomoposite films. The films were characterized by x-ray diffraction, field emission scanning electron microscope and photoluminescence measurements. We demonstrate that the incorporation of Si nanocrystals with sizes of 10–20 nm into the silica matrix resulted in strong Er-related PL in the infrared region peaking at 1535 nm and that the film can be well excited by non-resonant wavelengths (250–260 nm). The role of Si nanocrystals as sensitizers and the dependence of the Er-related PL on Er-doping concentration and annealing temperature are also discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/2053-1591/aa65fc

Additional details

Identifiers

Publishing Information

Journal Title
Materials Research Express (Online)
Journal Volume
4
Journal Issue
3
Journal Page Range
[6 p.]
ISSN
2053-1591