Published 1987
| Version v1
Miscellaneous
Characterization of GaAs implanted with Mo
- 1. Universidade Estadual de Campinas (Brazil)
- 2. Rio Grande do Sul Univ., Porto Alegre (Brazil)
Description
Published in summary form only
Additional details
Additional titles
- Original title (Portuguese)
- Caracterizacao de GaAs implantada com Mo
Publishing Information
- Imprint Title
- Proceedings of the 10. National Meeting on Condensed Matter Physics
- Imprint Pagination
- 192 p.
- Journal Page Range
- p. 161.
- Report number
- INIS-BR--1164
Conference
- Title
- 10. National Meeting on Condensed Matter Physics.
- Dates
- 5-8 May 1987.
- Place
- Caxambu, MG (Brazil).
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 19070273
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- DOPED MATERIALS; GALLIUM ARSENIDES; HEAT TREATMENTS; ION IMPLANTATION; KEV RANGE 100-1000; MOLYBDENUM IONS; PHOTOLUMINESCENCE; SUBSTRATES
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; CHARGED PARTICLES; EMISSION; ENERGY RANGE; GALLIUM COMPOUNDS; IONS; KEV RANGE; LUMINESCENCE; MATERIALS; PHOTON EMISSION
Optional Information
- Notes
- Imprint:Anais do 10. Encontro Nacional de Fisica da Materia Condensada.