Published July 2010
| Version v1
Journal article
Influence of gamma-irradiation on photoelectric parameters of pSi-n(Si2)1-x(CdS)x and pSi-n(Si2)1-x(ZnSe)x structures
- 1. AS RU, Physical-Technical Institute, Tashkent (Uzbekistan)
Description
Influence of small-dose γ-irradiation on relaxation process of non-equilibrium carriers in solid solution (Si2)1-x(CdS)x, the photosensitivities of pSi-n(Si2)1-x(CdS)x and pSi-n(Si2)1-x(ZnSe)x structures and the current-voltage characteristics of pSi-n(Si2)1-x(ZnSe)x structure has been studied. It has been shown that small-dose irradiation results in decreasing concentration of efficient recombination centres, increasing relaxation time of solid solution (Si2)1-x(CdS)x and increasing the photosensitivities of pSi-n(Si2)1-x (CdS)x structure at photon energy Eph = 2.40 eV and that of pSi-n(Si2)1-x(ZnSe)x structure at Eph = 2.54 eV. (authors)
Additional details
Publishing Information
- Journal Title
- Uzbekiston Fizika Zhurnali
- Journal Volume
- 12
- Journal Issue
- 4-6
- Journal Page Range
- p. 378-383
- ISSN
- 1025-8817
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 42016031
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AUGMENTATION; CADMIUM SULFIDES; CARRIERS; CURRENTS; DOSES; ELECTRIC POTENTIAL; EQUILIBRIUM; EV RANGE; GAMMA RADIATION; IRRADIATION; PHOTONS; PHOTOSENSITIVITY; RECOMBINATION; RELAXATION TIME; SOLID SOLUTIONS; ZINC SELENIDES
- Descriptors DEC
- BOSONS; CADMIUM COMPOUNDS; CHALCOGENIDES; DISPERSIONS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ENERGY RANGE; HOMOGENEOUS MIXTURES; INORGANIC PHOSPHORS; IONIZING RADIATIONS; MASSLESS PARTICLES; MIXTURES; PHOSPHORS; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SENSITIVITY; SOLUTIONS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- 6 refs., 3 figs., 1 tab.