Published 1993 | Version v1
Book

Low carrier removal rates and annealing behavior of thermally diffused p+n (Cd,S) InP structures after 1013cm-2 3MeV proton irradiation

  • 1. Cleveland State Univ., OH (United States). Space Photovoltaic Research Center
  • 2. NASA, Cleveland, OH (United States). Lewis Research Center
  • 3. Kent State Univ., OH (United States)

Description

Recently on bare p+n (Cd,S) InP diffused cells the authors recorded AMO, 25C VOC values exceeding 880 mV. In this work they present some of their most recent results showing much lower carrier removal rates in the emitter of p+n (Cd,S) diffused structures as compared to p+n (Zn,S) structures after irradiation with 1013cm-2, 3 MeV protons. They also show the complete recovery of emitter carrier concentration profiles of p+n (Cd,S) structures after about 2 months in dark at room temperature, a behavior they have not observed for the p+n (Zn,S) structures. The drop in ISC, FF and efficiency of diffused p+n (Cd,S) InP cells after proton irradiation is lower than previously reported values for n+p (Si,Zn) InP cells fabricated by MOCVD or n+p (S,Zn) InP cells fabricated by diffusion

Part of:
Twenty third IEEE photovoltaic specialists conference

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (United States)
ISBN
0-7803-1220-1
Imprint Title
Twenty third IEEE photovoltaic specialists conference
Imprint Pagination
1566 p.
Journal Page Range
p. 1437-1441.

Conference

Title
23. Institute of Electrical and Electronic Engineers (IEEE) photovoltaic specialists conference.
Dates
10-14 May 1993.
Place
Louisville, KY (United States).

Optional Information

Secondary number(s)
CONF-930540--.