Published March 2008 | Version v1
Journal article Metadata-only

Seeing the atomic orbitals in STM images of a Si(111)-(7 x 7) surface

Creators

  • 1. Institute of Solid State Physics RAS, Chernogolovka, Moscow district, 142432 (Russian Federation)

Description

We report on STM studies of a Si(111)-(7 x 7) surface with subatomic resolution. STM images with double atomic features due to the contribution of two dangling bonds of the silicon apex atom were measured at different bias voltages and tunnelling currents. The results of experiments reveal strong dependence of the subatomic features shapes on the gap resistance and the bias voltage polarity

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/100/1/012020

Additional details

Identifiers

DOI
10.1088/1742-6596/100/1/012020;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
100
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
17. international vacuum congress; ICSS-13: 13. international conference on surface science; ICN+T 2007: International conference on nanoscience and technology
Acronym
IVC-17
Dates
2-6 Jul 2007
Place
Stockholm (Sweden)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40016005
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMS; CHEMICAL BONDS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; IMAGES; RESOLUTION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACES; TUNNEL EFFECT
Descriptors DEC
CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; MICROSCOPY; PHYSICAL PROPERTIES; SEMIMETALS