High-performance epitaxial Na0.5K0.5NbO3 thin films by magnetron sputtering
Creators
- 1. Department of Materials and Manufacturing Engineering, Luleaa University of Technology, Luleaa (Sweden)
- 2. Department of Condensed Matter Physics, Royal Institute of Technology, S-164 40 Stockholm-Kista (Sweden)
Description
Epitaxial Na0.5K0.5NbO3 (NKN) thin films have been grown on LaAlO3 substrates by rf magnetron sputtering of a stoichiometric, high-density, ceramic target. X-ray diffraction analysis showed c-axis oriented cube-on-cube growth. Micrometer size interdigital capacitor (IDC) structures were defined on the surface of the NKN film using photolithography. The electrical characterization at 1 MHz showed dissipation factor tan δ of 0.010, tunability 16.5% at 200 kV/cm and dielectric permittivity εr=470. The frequency dispersion of εr between 1 kHz and 1 MHz was 8.5% and the IDCs showed very good insulating properties with leakage current density on the order of 30 nA/cm2 at 400 kV/cm. The polarization loop exhibits weak ferroelectric hysteresis with maximum polarization 23.5 μC/cm2 at 600 kV/cm. These results are promising for tunable microwave devices based on rf sputtered NKN thin films
Additional details
Identifiers
- DOI
- 10.1063/1.1492854;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 81
- Journal Issue
- 2
- Journal Page Range
- p. 337-339
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35024242
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CERAMICS; DEPOSITION; FERROELECTRIC MATERIALS; HYSTERESIS; LEAKAGE CURRENT; MAGNETRONS; MICROWAVE EQUIPMENT; PERMITTIVITY; POLARIZATION; POTASSIUM COMPOUNDS; SODIUM COMPOUNDS; SPUTTERING; STOICHIOMETRY; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- ALKALI METAL COMPOUNDS; COHERENT SCATTERING; CURRENTS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIFFRACTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; FILMS; MATERIALS; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PHYSICAL PROPERTIES; SCATTERING
Optional Information
- Notes
- (c) 2002 American Institute of Physics.