Published October 1, 1983
| Version v1
Journal article
Pressure dependence of the electron capture cross section of the B hole trap in liquid phase epitaxial gallium arsenide
Description
A study of the hydrostatic pressure dependence of the electron capture cross section of the B hole trap in liquid phase epitaxial gallium arsenide has revealed that this cross section is strongly affected by pressure. The results are consistent with, and provide support for, the multiphonon emission model for the capture process at this trap
Additional details
Publishing Information
- Journal Title
- Appl. Phys. Lett.
- Journal Volume
- 43
- Journal Issue
- 7
- Series
- Appl. Phys. Lett.
- Journal Page Range
- 677-679
- ISSN
- 0003-6951
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 15008975
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CHARGE EXCHANGE; CROSS SECTIONS; CRYSTAL GROWTH; EPITAXY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; HIGH PRESSURE; HIGH TEMPERATURE; HOLES; MEDIUM PRESSURE; MEDIUM TEMPERATURE; P-N JUNCTIONS; PHOTOEMISSION; PRESSURE DEPENDENCE; PULSES; RECOMBINATION; SPECTROSCOPY; TRAPS; VERY HIGH PRESSURE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; DATA; EMISSION; GALLIUM COMPOUNDS; INFORMATION; NUMERICAL DATA; SECONDARY EMISSION; SEMICONDUCTOR JUNCTIONS