Published August 1987
| Version v1
Report
Correlation between plasma parameters and the deposition of μC-Si films by plasma of argon and hydrogen
- 1. Israel Atomic Energy Commission, Tel Aviv
- 2. Ben-Gurion Univ. of the Negev, Beersheba (Israel)
Description
Published in summary form only
Additional details
Publishing Information
- Imprint Title
- Research laboratories annual report 1986
- Imprint Pagination
- 286 p.
- Journal Page Range
- p. 48.
- Report number
- IA--1427
INIS
- Country of Publication
- Israel
- Country of Input or Organization
- Israel
- INIS RN
- 19015067
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CORRELATIONS; DEPOSITION; DISSOCIATION; FILMS; PLASMA; REACTION KINETICS; SILANES; SILICON; SUBSTRATES
- Descriptors DEC
- ELEMENTS; HYDRIDES; HYDROGEN COMPOUNDS; KINETICS; SEMIMETALS; SILICON COMPOUNDS