Published November 15, 2008
| Version v1
Journal article
Study of laser excited vibration of silicon cantilever
- 1. MOE Key Laboratory for Strength and Vibration, School of Aerospace, Xi'an Jiaotong University, 710049 Xi'an (China)
- 2. FEMTO-ST Institute, Universite de Franche-Comte-CNRS-ENSMM-UTBM, 32, Avenue de l'Observatoire, 25044 Besancon Cedex (France)
- 3. Center for Multidisciplinary Studies, University of Belgrade, Kneza Viseslava, 11030 Belgrade, Serbia (Serbia )
Description
In this paper an interferometric setup called ''thermoelastic microscopy'' has been used to measure the vibration response of the semiconductor cantilevers under modulated laser thermal source. The small vibration amplitude has been detected well below 10 pm magnitude in accurate adjustment conditions. The results showed that experimental responses have a good agreement with the theoretical ones. Also from the analysis we could conclude that the signal amplitude has a power functional dependence on the modulation frequency and that the phase angle linearly depended on the square root of modulation frequency
Additional details
Identifiers
- DOI
- 10.1063/1.2987470;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 10
- Journal Page Range
- p. 104909-104909.6
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40059547
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMPLITUDES; MICROSCOPY; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SIGNALS; SILICON; THERMOELASTICITY
- Descriptors DEC
- ELASTICITY; ELEMENTS; LASERS; MATERIALS; MECHANICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMIMETALS; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2008 American Institute of Physics