Published December 2002 | Version v1
Journal article Metadata-only

Isotope-pure silicon layers grown by MBE

Creators

  • 1. Elektromekhanicheskii Zavod Production Association, Tsentrobezhnye Tekhnologii Scientific and Technological Center, St. Petersburg, 198096 (Russian Federation)
  • 2. Kholpin Radium Institute Scientific and Production Association, St. Petersburg, 194021 (Russian Federation)
  • 3. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021 (Russian Federation)
  • 4. VITCON Projectconsult Gmbh, D-07745 Jena (Germany)

Description

Molecular-beam epitaxy with a solid source was used to grow silicon layers enriched with 28Si and 30Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal perfection of the layers obtained

Additional details

Identifiers

DOI
10.1134/1.1529253;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
12
Journal Page Range
p. 1400-1402
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051959
Subject category
S36: MATERIALS SCIENCE; S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
EXPERIMENTAL DATA; ION MICROPROBE ANALYSIS; LAYERS; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; SILICON 28; SILICON 30
Descriptors DEC
CHEMICAL ANALYSIS; CRYSTAL GROWTH METHODS; DATA; ELEMENTS; EPITAXY; EVEN-EVEN NUCLEI; INFORMATION; ISOTOPES; LIGHT NUCLEI; MATERIALS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; NUCLEI; NUMERICAL DATA; SEMIMETALS; SILICON ISOTOPES; SPECTRA; SPECTROSCOPY; STABLE ISOTOPES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1486-1488 (No. 12, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.