Quantum Hall interferometry at finite bias with multiple edge channels
- 1. Department of Physics, Brown University, Providence, Rhode Island 02912, USA
- 2. Brown Theoretical Physics Center, Brown University, Providence, Rhode Island 02912, USA
- 3. Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
Description
In a quantum Hall interferometer, the dependence of the signal on source-drain voltage is controlled by details of the edge physics, such as the velocities of edge modes and the interaction between them and with screening layers. Such dependence of the signal has been seen in recent experiments at various integer and fractional filling factors, including and , where two edge modes are present. Here we study theoretically the current-voltage curves for various values of the relative edge velocities, interaction strength, and the temperature, in a model containing two edge modes. We consider separate cases in which the inner mode or the outer mode is weakly backscattered at the tunneling contacts. When the inner mode is completely reflected and the outer mode is partially transmitted, we find striking features at very low temperatures related to resonance of excitations of the closed inner channel. Fluctuations in the charge of the closed inner mode, caused by sparse tunneling events, lead to an exponential suppression of the interference visibility at high voltages, in agreement with experiments.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.110.075306;
- arXiv
- arXiv:2405.05486;
- Crossref Funder ID
- 10.13039/100000001;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 110
- Journal Issue
- 7
- Journal Page Range
- 24 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BACKSCATTERING; DIAGRAMS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EXCITATION; FLUCTUATIONS; HALL EFFECT; INTERACTIONS; INTERFERENCE; INTERFEROMETERS; INTERFEROMETRY; LAYERS; RESONANCE; TUNNEL DIODES; TUNNEL EFFECT; VELOCITY
- Descriptors DEC
- ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; INFORMATION; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; SCATTERING; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; VARIATIONS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- DMR-2204635; DMR-1231319
- Notes
- Record automatically processed
- Funding organization
- National Science Foundation