Radiation resistance of photodiodes based on indium monoselenides under γ-irradiation
Creators
- 1. Chernivtsi Department of the Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, 5, Iryna Vilde Str., 58001 Chernivtsi (Ukraine)
- 2. Institute of Materials Science Problems, The National Academy of Sciences of Ukraine, Krzhyzhanivskogo Str., 3, 03680 Kyiv (Ukraine)
- 3. National Scientific Center 'Kharkiv Physico-Technical Institute', The National Academy of Sciences of Ukraine, 1, Academichna Str., 61108 Kharkiv (Ukraine)
- 4. Chernivtsi National University, 2, Kotsyubynsky Str., 58012 Chernivtsi (Ukraine)
Description
The influence of γ-irradiation (E = 3 MeV) over a large dose range 0.14-140 kGy on the electrical and photoelectric parameters of p-n-InSe and intrinsic oxide-p-InSe photoconvertors has been investigated. The detected changes in current-voltage characteristics, photoresponse spectra, open-circuit voltage, and short-circuit current for the structures are explained by the formation of radiation-induced point defects. A comparison to silicon photodiodes irradiated at analogous conditions has been carried out. On the basis of the absence of essential changes of the characteristics of the homo- and hetero-junctions based on III-VI layered semiconductors even at the maximum irradiation doses these junctions are recommended as radiation-resistant photodetectors for operation under γ-irradiation
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2008.12.036Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2008.12.036;
- PII
- S0022-3115(08)00761-7;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 385
- Journal Issue
- 2
- Journal Page Range
- p. 489-494
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 3. symposium N on nuclear materials
- Acronym
- E-MRS 2008 spring meeting
- Dates
- 26-30 May 2008
- Place
- Strasbourg (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40050251
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRICAL FAULTS; GAMMA RADIATION; INDIUM SELENIDES; IRRADIATION; MEV RANGE 01-10; OXIDES; PHOTODETECTORS; PHOTODIODES; POINT DEFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CURRENTS; DOSES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; INDIUM COMPOUNDS; IONIZING RADIATIONS; MATERIALS; MEV RANGE; OXYGEN COMPOUNDS; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.