Retention and desorption of implanted deuterium of high-Z plasma facing materials
Creators
- 1. Kyushu Univ., Fukuoka (Japan). Interdisciplinary Graduate Sch. of Eng. Sci.
- 2. National Institute for Fusion Science, Nagoya (Japan)
- 3. Research Institute for Applied Mechanics, Kyushu University, Fukuoka (Japan)
Description
Thermal desorption after D2+ irradiation from high-Z materials (W and Mo) has been compared with radiation induced microstructural evolution to investigate the details of retention and desorption of the implanted deuterium and underlying microscopic mechanism of the processes. The experimental results indicate that residual impurities act as major trapping sites for implanted deuterium independently of the ion energy for relatively low dose. The trapped deuterium is desorbed in two steps between 470 K and 660 K for high purity Mo, and 400 K and 650 K for high purity W. In the case of Mo damaged heavily at room temperature (1 x 1022 ions/m2), small cavities trap deuterium and give a large desorption stage at around 640 K. Radiation induced dislocation loops also trap the implanted deuterium effectively. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 233-237
- Journal Issue
- pt.A
- Journal Page Range
- p. 776-780.
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 7. international conference on fusion reactor materials (ICFRM-7).
- Dates
- 25-29 Sep 1995.
- Place
- Obninsk (Russian Federation).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 28024472
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DESORPTION; DEUTERIUM; DISLOCATIONS; EV RANGE 100-1000; ION IMPLANTATION; KEV RANGE 01-10; MICROSTRUCTURE; MOLYBDENUM; RADIATION DOSES; RETENTION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMONUCLEAR REACTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; TUNGSTEN; VOIDS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; ENERGY RANGE; EV RANGE; HYDROGEN ISOTOPES; ISOTOPES; KEV RANGE; LIGHT NUCLEI; LINE DEFECTS; MATERIALS; METALS; MICROSCOPY; NUCLEI; ODD-ODD NUCLEI; STABLE ISOTOPES; TEMPERATURE RANGE; TRANSITION ELEMENTS