Radiative power of a dipole in the proximity of a dielectric interface: a case study of a quantum-dot exciton transition dipole

We theoretically simulate the radiative power of an emitting dipole near a dielectric interface. When the dielectric constant of the dipole resting medium is larger than that of the substrate/dielectric interface, the radiative power is perturbed strongly at less than λ/2π by the interface due to the imposed boundary conditions on the plane waves, rather than the evanescent waves. The radiative power of an emitter is also sensitive to the dipole orientation in the proximity of the interface. Previous experimental results on the distance-dependent exciton lifetime of quantum dots in the proximity (≤35 nm) of a dielectric interface are considered and explained using the simulated results of radiative power for an emitting dipole