Published 1974
| Version v1
Report
Investigation of electron irradiation effects on SiO2--Si surfaces using the energy distribution of secondary electrons
Description
no abstract available
Additional details
Publishing Information
- Imprint Pagination
- 107 p.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6195805
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRON BEAMS; LAYERS; N-TYPE CONDUCTORS; OXIDES; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SECONDARY EMISSION; SILICON; SILICON OXIDES; SURFACES; THICKNESS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; DIMENSIONS; ELEMENTS; EMISSION; LEPTON BEAMS; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- University Microfilms Order No. 75-6405.