Dielectronic recombination process in laser-produced Xe plasmas

Dielectronic recombination (DR) coefficients for the ground-state ion of Ni-like Xe have been calculated through Cu-like 3d9 nln'f(n,n'=4,5,6) inner-shell excited configurations using the spin-orbit-split array (SOSA) model. Resonant and nonresonant radiative stabilizing transitions and decays to autoionizing levels followed by radiative cascades are included. Collisional transitions following electron capture are neglected. Nonresonant stabilizing transitions are found to enhance DR rates, and may even dominate the process at low electron temperature. The trend of the DR rate coefficients and the ratio of dielectronic satellite lines intensities with the changes of the electron temperature are discussed. (authors)