Structural transitions at the surface of the decagonal quasicrystal Al-Co-Ni
Description
At the 2- and 10-fold-symmetry surfaces of the two-dimensional quasicrystal Al-Co-Ni an epitaxial cubic layer is induced by preferential sputtering of Al using Ar+ ions. Annealing the sample at 760 K restores the Al concentration at the surface and, thereby, the quasicrystalline structure. Simultaneous observations of the surface chemistry by Auger electron spectroscopy and of its atomic structure by secondary-electron imaging reveal that the transition is a two-step process. The replenishment of Al at the surface is limited by high-temperature mediated diffusion of Al from bulk, while the assembly kinetics of the quasicrystalline structure proceeds at lower temperatures. Thus, the underlying bulk Al-Co-Ni quasicrystal acts as an Al reservoir and as a structural template for the recovery of the quasicrystal. The paper also presents a discussion of different cubic orientations of the surface phase formed by different sputtering conditions
Additional details
Identifiers
- DOI
- 10.1016/S0169-4332(03)00017-5;
- arXiv
- arXiv:alg-geom/9510003v1;
- PII
- S0169433203000175;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 212-213
- Journal Issue
- 2
- Journal Page Range
- p. 43-46
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 11. international conference on solid films and surfaces
- Acronym
- ICSFS-11
- Dates
- 8-12 Jul 2002
- Place
- Marseille (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38086540
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ANNEALING; ARGON IONS; AUGER ELECTRON SPECTROSCOPY; COBALT COMPOUNDS; DIFFUSION; EPITAXY; KINETICS; LAYERS; NICKEL COMPOUNDS; ORIENTATION; SPUTTERING; SURFACES; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELECTRON SPECTROSCOPY; HEAT TREATMENTS; IONS; SPECTROSCOPY; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.