A bootstrapped switch employing a new clock feed-through compensation technique
Creators
- 1. School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 (China)
- 2. NXP Semiconductors (Shanghai) Ltd, Shanghai 200070 (China)
Description
Nonlinearity caused by the clock feed-through of a bootstrapped switch and its compensation techniques are analyzed. All kinds of clock feed-through compensation configurations and their drawbacks are also investigated. It is pointed out that the delay path match of the clock boosting circuit is the critical factor that affects the effectiveness of clock feed-through compensation. Based on that, a new clock feed-through compensation configuration and corresponding bootstrapped switch are presented and designed optimally with the UMC mixed-mode/RF 0.18 μm 1P6M P-sub twin-well CMOS process by orientating and elaborately designing the switch MOSFETs that influence the delay path match of the clock boosting circuit. HSPICE simulation results show that the proposed clock feed-through compensation configuration can not only enhance the sampling accuracy under variations of process, power supply voltage, temperature and capacitors but also decrease the even harmonic, high-order odd harmonic and THD on the whole effectively. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/12/125007Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 12
- Journal Page Range
- [10 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42068385
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- MOSFET; SIMULATION; SWITCHES
- Descriptors DEC
- ELECTRICAL EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS