Published December 2009 | Version v1
Journal article

A bootstrapped switch employing a new clock feed-through compensation technique

  • 1. School of Microelectronics, Xidian University, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071 (China)
  • 2. NXP Semiconductors (Shanghai) Ltd, Shanghai 200070 (China)

Description

Nonlinearity caused by the clock feed-through of a bootstrapped switch and its compensation techniques are analyzed. All kinds of clock feed-through compensation configurations and their drawbacks are also investigated. It is pointed out that the delay path match of the clock boosting circuit is the critical factor that affects the effectiveness of clock feed-through compensation. Based on that, a new clock feed-through compensation configuration and corresponding bootstrapped switch are presented and designed optimally with the UMC mixed-mode/RF 0.18 μm 1P6M P-sub twin-well CMOS process by orientating and elaborately designing the switch MOSFETs that influence the delay path match of the clock boosting circuit. HSPICE simulation results show that the proposed clock feed-through compensation configuration can not only enhance the sampling accuracy under variations of process, power supply voltage, temperature and capacitors but also decrease the even harmonic, high-order odd harmonic and THD on the whole effectively. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/12/125007

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
12
Journal Page Range
[10 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
42068385
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
MOSFET; SIMULATION; SWITCHES
Descriptors DEC
ELECTRICAL EQUIPMENT; EQUIPMENT; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS