Published November 2004 | Version v1
Journal article Metadata-only

Transformerless high voltage bias for Si-PIN detector

Creators

  • 1. Chengdu Univ. of Technology, Chengdu (China). College of Applied Nuclear and Automation Engineering

Description

Utilizing the circuit of charge pump, voltage multipliers, and linear voltage regulator, a transformerless DC-DC converter was designed in order to produce a high voltage bias of +100 volts for Si-PIN detector from single +5 volt supply. The converter turns out to be small in size, featuring high stability, low ripple noise and low power consumption. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
24
Journal Issue
6
Journal Page Range
p. 711-713
ISSN
0258-0934

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
39002143
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; ELECTRIC POWER; ELECTRONIC CIRCUITS; PERFORMANCE; SI SEMICONDUCTOR DETECTORS
Descriptors DEC
MEASURING INSTRUMENTS; POWER; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS

Optional Information

Notes
5 figs., 4 refs.