Published December 15, 2006
| Version v1
Journal article
Physics of process induced uniaxially strained Si
- 1. Department of Electrical and Computer Engineering, University of Florida, P.O. Box 116130, Gainesville, FL 32611 (United States)
Description
Uniaxial process induced stress is being adopted in all 90, 65, and 45 nm high performance logic technologies. The uniaxial stress offers large performance improvement at low cost and minimally increased manufacturing complexity and is scalable to future technology nodes. The mobility enhancement is larger for uniaxial than biaxial stress and can be understood from the strain altered band structure
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2006.08.024;
- PII
- S0921-5107(06)00449-1;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 135
- Journal Issue
- 3
- Journal Page Range
- p. 179-183
- ISSN
- 0921-5107
- CODEN
- MSBTEK
Conference
- Title
- Symposium B: From strained silicon to nanotubes - Novel channels for field effect devices
- Acronym
- E-MRS IUMRS ICEM 2006
- Dates
- 29 May - 2 Jun 2006
- Place
- Nice (France)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38087116
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COST; MANUFACTURING; MOBILITY; PERFORMANCE; SILICON; STRAINS; STRESSES
- Descriptors DEC
- ELEMENTS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.