Published December 31, 2003
| Version v1
Journal article
Influence of electric field on the photoluminescence of δ-doped type II GaAs/AlAs superlattices
Description
The steady-state low-temperature photoluminescence (PL) of type II GaAs/AlAs superlattices (SL) under the influence of the electric field of a surface acoustic wave (SAW) has been investigated experimentally. When a SAW with a field strength of up to 6 kV/cm is applied, the excitonic PL intensity decreases considerably (by up to 50%) in an undoped SL, while it does not vary significantly in doped SLs. A simple model explaining the experimental results is discussed
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.182;
- PII
- S0921452603008603;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 1086-1089
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37000738
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; DOPED MATERIALS; ELECTRIC FIELDS; GALLIUM ARSENIDES; INTERFACES; PHOTOLUMINESCENCE; SOUND WAVES; SUPERLATTICES; SURFACES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.