Diffusion anisotropy and void development under cascade irradiation
Creators
- 1. Russian Academy of Sciences, Institute for Nuclear Research, Moscow (Russian Federation)
- 2. The Hong Kong Polytechnic University, Department of Electronic and Information Engineering, Kowloon, Hong Kong SAR (China)
- 3. Universitaet Stuttgart, Institut fuer Theoretische und Angewandte Physik, Stuttgart (Germany)
- 4. Max-Planck-Institut fuer Metallforschung, Stuttgart (Germany)
Description
Cascade irradiation of metals gives rise to swelling as a result of the creation of voids and the evolution of the void ensemble. Under suitable circumstances, the originally disordered void distribution transforms into to a void lattice. As demonstrated previously, the understanding of the evolution and the unique features of the void ensemble requires a difference in the anisotropy of the diffusion (DAD) of vacancies and self-interstitial atoms (SIAs), which is achieved by one-dimensional diffusion of the SIAs. On the other hand, void swelling has been successfully modeled in terms of three-dimensional diffusion of both vacancies and SIAs. In the present paper it is shown that these seemingly contradicting interpretations and all related observations can be quantitatively reconciled by a small DAD created by only ∝1% of SIAs diffusing one-dimensionally. It is also demonstrated that at the initial stage of void-lattice formation, ordering occurs mainly on close-packed crystal planes, which is in contrast to the naive expectation that one-dimensional diffusion of SIAs should result in a void ordering along close-packed directions. Finally it is found that, in the case of a small DAD, voids annihilate via stochastic shrinkage much faster than by coalescence. This falsifies the argument in the literature that one-dimensional diffusion of SIAs would necessarily lead to the coalescence of voids and destabilization of the void lattice. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-008-4832-4Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 93
- Journal Issue
- 2
- Series
- Special issue: Elementary processes in molecular switches at surfaces
- Journal Page Range
- p. 365-377
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 39106404
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALIGNMENT; ANISOTROPY; CASCADE THEORY; COALESCENCE; CRYSTAL LATTICES; DIFFUSION; DISTRIBUTION FUNCTIONS; INTERSTITIALS; KINETIC EQUATIONS; METALS; ONE-DIMENSIONAL CALCULATIONS; PHYSICAL RADIATION EFFECTS; STOCHASTIC PROCESSES; SWELLING; THREE-DIMENSIONAL CALCULATIONS; VACANCIES; VOIDS
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEFORMATION; ELEMENTS; EQUATIONS; FUNCTIONS; POINT DEFECTS; RADIATION EFFECTS