Published August 2018 | Version v1
Journal article

Problems of Using a Solvent-cleansed Silicon Oxide Substrate as the Friction Reference Sample at the Nanoscale

  • 1. Hanyang University, Ansan (Korea, Republic of)

Description

For comparative friction studies, a reference sample, which holds stable and reproducible frictional characteristics, is required. Here, we have studied the frictional properties of native silicon oxide and silicon oxide formed through wet thermal oxidation by using lateral force microscopy. Once cleansed using solvents such as acetone, the friction measured on these frequently-used reference materials undergoes gradual change by a series of scanning. The friction is observed to increase with the number of scans and reaches about 1.5 times the initial value. We find that soft baking at 150 ◦ C - 200 ◦ C for 30 minutes can eliminate this problem.

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
73
Journal Issue
3
Series
15 refs, 3 figs
Journal Page Range
p. 392-395
ISSN
0374-4884

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
50064455
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ATOMIC FORCE MICROSCOPY; CLEANING; FRICTION; SILICON OXIDES; SOLVENT EXTRACTION; SURFACES
Descriptors DEC
CHALCOGENIDES; EXTRACTION; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEPARATION PROCESSES; SILICON COMPOUNDS