Published August 2018
| Version v1
Journal article
Problems of Using a Solvent-cleansed Silicon Oxide Substrate as the Friction Reference Sample at the Nanoscale
Description
For comparative friction studies, a reference sample, which holds stable and reproducible frictional characteristics, is required. Here, we have studied the frictional properties of native silicon oxide and silicon oxide formed through wet thermal oxidation by using lateral force microscopy. Once cleansed using solvents such as acetone, the friction measured on these frequently-used reference materials undergoes gradual change by a series of scanning. The friction is observed to increase with the number of scans and reaches about 1.5 times the initial value. We find that soft baking at 150 ◦ C - 200 ◦ C for 30 minutes can eliminate this problem.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 73
- Journal Issue
- 3
- Series
- 15 refs, 3 figs
- Journal Page Range
- p. 392-395
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 50064455
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CLEANING; FRICTION; SILICON OXIDES; SOLVENT EXTRACTION; SURFACES
- Descriptors DEC
- CHALCOGENIDES; EXTRACTION; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; SEPARATION PROCESSES; SILICON COMPOUNDS