Theoretical study of the elasticity, mechanical behavior, electronic structure, interatomic bonding, and dielectric function of an intergranular glassy film model in prismatic β-Si3N4
- 1. Department of Physics, University of Missouri-Kansas City, Kansas City, Missouri 64110 (United States)
- 2. Department of Physics and Mathematics, Tennessee State University, Nashville, Tennessee 37221 (United States)
- 3. Department of Civil, Environmental, and Architectural Engineering, University of Kansas, Lawrence, Kansas 66045 (United States)
Description
Microstructures such as intergranular glassy films (IGFs) are ubiquitous in many structural ceramics. They control many of the important physical properties of polycrystalline ceramics and can be influenced during processing to modify the performance of devices that contain them. In recent years, there has been intense research, both experimentally and computationally, on the structure and properties of IGFs. Unlike grain boundaries or dislocations with well-defined crystalline planes, the atomic scale structure of IGFs, their fundamental electronic interactions, and their bonding characteristics are far more complicated and not well known. In this paper, we present the results of theoretical simulations using ab initio methods on an IGF model in β-Si3N4 with prismatic crystalline planes. The 907-atom model has a dimension of 14.533 A x 15.225 A x 47.420 A . The IGF layer is perpendicular to the z axis, 16.4 A wide, and contains 72 Si, 32 N, and 124 O atoms. Based on this model, the mechanical and elastic properties, the electronic structure, the interatomic bonding, the localization of defective states, the distribution of electrostatic potential, and the optical dielectric function are evaluated and compared with crystalline β-Si3N4. We have also performed a theoretical tensile experiment on this model by incrementally extending the structure in the direction perpendicular to the IGF plane until the model fully separated. It is shown that fracture occurs at a strain of 9.42% with a maximum stress of 13.9 GPa. The fractured segments show plastic behavior and the formation of surfacial films on the β-Si3N4. These results are very different from those of a previously studied basal plane model [J. Chen et al., Phys. Rev. Lett. 95, 256103 (2005)] and add insights to the structure and behavior of IGFs in polycrystalline ceramics. The implications of these results and the need for further investigations are discussed.
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 81
- Journal Issue
- 21
- Journal Page Range
- p. 214120-214120.14
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42003534
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMS; BONDING; CERAMICS; DIELECTRIC MATERIALS; DISLOCATIONS; DISTRIBUTION; ELASTICITY; ELECTRONIC STRUCTURE; FILMS; GRAIN BOUNDARIES; INTERACTIONS; LAYERS; PERFORMANCE; PHYSICAL PROPERTIES; PLASTICITY; POLYCRYSTALS; PRESSURE RANGE GIGA PA; PROCESSING; SILICON; SILICON NITRIDES; SIMULATION; STRAINS; STRESSES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; FABRICATION; JOINING; LINE DEFECTS; MATERIALS; MECHANICAL PROPERTIES; MICROSTRUCTURE; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; PRESSURE RANGE; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- (c) 2010 The American Physical Society