Mesoscopic FCC Co ring magnets
Description
We present the results of a systematic study of the magnetic properties of micrometer size arrays of Co(1 0 0) epitaxial ring magnets grown on prepatterned Si substrates. The Co thickness varied between 5 and 34 nm and the outer diameter of the rings varied between 0.9 and 1.6 μm. Magnetic measurements and micromagnetic simulations show that for appropriate ring structures a two-step switching process occurs, indicating the existence of two different stable states. In addition to the vortex state, we have identified a new bi-domain state, the 'onion state', corresponding to opposite circulation of the magnetisation in each half of the ring. The onion state is stable at remanence and undergoes a simple and well-characterised nucleation-free switching. Using micromagnetic simulations we show also that the magnetisation reversal in narrow rings can take place via a nucleation-free domain wall motion process when a field pulse is applied in the plane of the film and perpendicular to the net magnetisation. Switching times of the order of 400 ps are predicted with this approach
Additional details
Identifiers
- PII
- S0304885302005322;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 249
- Journal Issue
- 1-2
- Journal Page Range
- p. 208-213
- ISSN
- 0304-8853
- CODEN
- JMMMDC
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 34011774
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CALCULATION METHODS; COBALT; COMPUTER CALCULATIONS; COMPUTERIZED SIMULATION; CRYSTAL GROWTH; DOMAIN STRUCTURE; FCC LATTICES; MAGNETIC FIELD REVERSAL; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIZATION; NUMERICAL ANALYSIS; RINGS; THIN FILM STORAGE DEVICES; THIN FILMS; WALL EFFECTS
- Descriptors DEC
- CRYSTAL LATTICES; CRYSTAL STRUCTURE; CUBIC LATTICES; ELEMENTS; FILMS; MAGNETIC FIELD CONFIGURATIONS; MATERIALS; MATHEMATICS; MEMORY DEVICES; METALS; PHYSICAL PROPERTIES; SIMULATION; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.