Photoelectric properties of n-SnS2-p-InSe heterojunction

Investigations were carried out into the photoelectric properties of the anisotypic heterojunction SnS2-InSe produced by the method of optical contact of semiconductors. Analysis of the volt-farad characteristics of the junction shows that under equilibrium conditions the inversion regime takes place in it. The formation of the p-n-homojunction in the basic semiconductor is confirmed by the measurements of volt-ampere characteristics whose straight branches at low voltages are not distorted by shunting currents. The energy band diagram of the heterojunction and its photosensitivity spectrum are presented. (author)