The partial composition of a dense electron-hole system and the exciton-plasma transformation in uniaxially stressed silicon

Two phase region of the gas-electron-hole liquid in Si stressed elastically along the <100> axis is determined and the critical temperature is estimated equal to T sub(c) = 14 +- 1.5K. It has been found that on growth of density up to r sub(s) = 2.7 +- 0.3 and at T < 12.5K the gas phase consists predominantly of excitons and excitonic molecules. It has been found that at T > T sub(c) the excitonic state are destroyed at densities corresponding to r sub(s)sup(c) = 2,5/2. (author)