Published June 25, 2014 | Version v1
Journal article

Strain tuning of magnetism in Mn doped MoS2 monolayer

  • 1. School of Physics and Electronic Engineering, Jiangsu Normal University, Xuzhou 221116, People's Republicof China (China)
  • 2. International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China (China)

Description

We study the strain tuning of magnetism in Mn doped MoS2 monolayer system. With the increase of the tensile strain, the magnetic ground state changes from a state with total magnetic moment Mtot =1.0 μB to another state with Mtot =3.0  μB for single doping in a 4 × 4 supercell. Physical mechanism is elucidated from the effects of the local bonding and geometry symmetries on orbital hybridization. In addition, we find the ferromagnetic coupling is favored for small distances between Mn atoms corresponding to the uniform doping concentration of 25%. More importantly, the ferromagnetic state is highly stable and robust to tensile strains. Therefore, diluted magnetic semiconductors can be obtained and the strain engineering should be a very promising approach to tune the magnetic moments. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/26/25/256003

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
26
Journal Issue
25
Journal Page Range
[6 p.]
ISSN
0953-8984
CODEN
JCOMEL