Published June 1981
| Version v1
Journal article
Quadrupole interaction of 125Te and 129I in Te implanted semiconductors
- 1. Leuven Univ. (Belgium). Inst. voor Kern- en Strahlingsfysika
Description
Moesbauer measurements on 125Te and 129I in Te implanted silicon before and after laser annealing give consistent results. In the as-implanted samples a non cubic site with quadrupole interaction is populated and after laser annealing the Te is situated mainly in the substitutional site. (orig.)
Additional details
Publishing Information
- Journal Title
- Hyperfine Interact.
- Journal Volume
- 10
- Journal Issue
- 1-4
- Series
- Hyperfine Interact.
- Journal Page Range
- 973-977
- ISSN
- 0304-3843
Conference
- Title
- 5. international conference on hyperfine interactions.
- Dates
- 21 - 25 Jul 1980.
- Place
- Berlin, Germany, F.R.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12633610
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; HYPERFINE STRUCTURE; IODINE 129; ION IMPLANTATION; LASER RADIATION; MOESSBAUER EFFECT; QUADRUPOLE MOMENTS; SILICON; TELLURIUM ADDITIONS; TELLURIUM 125
- Descriptors DEC
- BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; DAYS LIVING RADIOISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTS; EVEN-ODD NUCLEI; HEAT TREATMENTS; INTERMEDIATE MASS NUCLEI; INTERNAL CONVERSION RADIOISOTO; IODINE ISOTOPES; ISOMERIC TRANSITION ISOTOPES; ISOTOPES; NUCLEI; ODD-EVEN NUCLEI; RADIATIONS; RADIOISOTOPES; SEMIMETALS; STABLE ISOTOPES; TELLURIUM ISOTOPES; YEARS LIVING RADIOISOTOPES