Micro-chemical analysis of diffusion bonded W-SiC joint
Creators
- 1. Graduate Student, Graduate School of Engineering, Hokkaido University, Sapporo Hokkaido 060-8628 (Japan)
- 2. Center for Advanced Research of Energy Conversion Materials, Hokkaido University, Sapporo Hokkaido 060-8628 (Japan)
- 3. Department of Materials Science and Engineering, Muroran Institute of Technology, Muroran Hokkaido 050-8585 (Japan)
Description
W and SiC joining has an attractive feature for high-temperature energy conversion systems. However, it is unclear and that is necessary to study the microstructure of the reaction phase between W and SiC by using the thermal diffusion bonding method. This work demonstrates the strengthening mechanism of W and SiC joining through a microstructure analysis of the reaction phase by FE-TEM/EDS and the observation of the interface in W and SiC after the crack propagation in HVEM. The reaction phase was amorphous, with a gap from 500 to 600 nm between W and SiC. Fine precipitates with a diameter of several tens nanometer were formed in the reaction phase. The reaction phase and precipitates did not match the chemical composition of the equilibrium compound. It is conceivable that the reaction phase and precipitates exist as a non-equilibrium condition before they reach equilibrium condition.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jnucmat.2011.02.005Additional details
Identifiers
- DOI
- 10.1016/j.jnucmat.2011.02.005;
- PII
- S0022-3115(11)00190-5;
Publishing Information
- Journal Title
- Journal of Nuclear Materials
- Journal Volume
- 417
- Journal Issue
- 1-3
- Journal Page Range
- p. 391-394
- ISSN
- 0022-3115
- CODEN
- JNUMAM
Conference
- Title
- 14. international conference on fusion reactor materials
- Acronym
- ICFRM-14
- Dates
- 7-12 Sep 2009
- Place
- Sapporo (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43059769
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BONDING; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; CRACK PROPAGATION; ENERGY CONVERSION; JOINTS; MICROSTRUCTURE; PRECIPITATION; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; THERMAL DIFFUSION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CONVERSION; DIFFUSION; FABRICATION; JOINING; SEPARATION PROCESSES; SILICON COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.