Published October 1, 2011 | Version v1
Journal article

Micro-chemical analysis of diffusion bonded W-SiC joint

  • 1. Graduate Student, Graduate School of Engineering, Hokkaido University, Sapporo Hokkaido 060-8628 (Japan)
  • 2. Center for Advanced Research of Energy Conversion Materials, Hokkaido University, Sapporo Hokkaido 060-8628 (Japan)
  • 3. Department of Materials Science and Engineering, Muroran Institute of Technology, Muroran Hokkaido 050-8585 (Japan)

Description

W and SiC joining has an attractive feature for high-temperature energy conversion systems. However, it is unclear and that is necessary to study the microstructure of the reaction phase between W and SiC by using the thermal diffusion bonding method. This work demonstrates the strengthening mechanism of W and SiC joining through a microstructure analysis of the reaction phase by FE-TEM/EDS and the observation of the interface in W and SiC after the crack propagation in HVEM. The reaction phase was amorphous, with a gap from 500 to 600 nm between W and SiC. Fine precipitates with a diameter of several tens nanometer were formed in the reaction phase. The reaction phase and precipitates did not match the chemical composition of the equilibrium compound. It is conceivable that the reaction phase and precipitates exist as a non-equilibrium condition before they reach equilibrium condition.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jnucmat.2011.02.005

Additional details

Identifiers

DOI
10.1016/j.jnucmat.2011.02.005;
PII
S0022-3115(11)00190-5;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
417
Journal Issue
1-3
Journal Page Range
p. 391-394
ISSN
0022-3115
CODEN
JNUMAM

Conference

Title
14. international conference on fusion reactor materials
Acronym
ICFRM-14
Dates
7-12 Sep 2009
Place
Sapporo (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43059769
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
BONDING; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; CRACK PROPAGATION; ENERGY CONVERSION; JOINTS; MICROSTRUCTURE; PRECIPITATION; SILICON CARBIDES; TEMPERATURE RANGE 0400-1000 K; THERMAL DIFFUSION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; CONVERSION; DIFFUSION; FABRICATION; JOINING; SEPARATION PROCESSES; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.