Published November 1996 | Version v1
Journal article Metadata-only

Kinetics of formation and dissociation of radiation-plus-annealing induced VAsZnGa pairs in p-type GaAs(Zn)

Creators

  • 1. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev (Ukraine)

Description

The influence of electron irradiation with dose Φ=1016 cm-2 and subsequent annealing (at temperatures T=150-350 deg. C for times t=10-600 min) of p-type GaAs crystals on the formation and dissociation of VAsZnGa pairs has been studied. An analysis of the kinetics of formation and dissociation of VAsZnGa pairs allowed us to determine the diffusion coefficient D of radiation-induced arsenic vacancies D (D=1.5x10-18, 1x10-17, and 5x10-17 cm2/s at 150, 175, and 200 deg. C, respectively), the activation energy εm of their diffusion process (εm=1.1 eV), and also the dissociation energy εd of these vacancies (εd=1.6 eV)

Additional details

Publishing Information

Journal Title
Semiconductors
Journal Volume
30
Journal Issue
11
Journal Page Range
p. 1059-1063
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046596
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DISSOCIATION ENERGY; DOPED MATERIALS; ELECTRON BEAMS; EXPERIMENTAL DATA; GALLIUM ARSENIDES; ION PAIRS; KINETICS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; TEMPERATURE RANGE 0400-1000 K; THERMAL DIFFUSION; VACANCIES; ZINC ADDITIONS
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DATA; DIFFUSION; ENERGY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; LEPTON BEAMS; MATERIALS; NUMERICAL DATA; PARTICLE BEAMS; PNICTIDES; POINT DEFECTS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TEMPERATURE RANGE; ZINC ALLOYS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 30, 2033-2041 (November 1996); (c) 1996 American Institute of Physics.