Effects of Nitrogen Partial Pressures During RF Magnetron Sputtering on the Crystal Structure and Growth Rate of c-BN Films

The types of atmospheric gases used in sputtering deposition are crucial in the formation of cubic boron nitride (c-BN) films. c-BN films were deposited on an Si wafer using radio frequency (RF) magnetron sputtering with a B₄C target at N₂/Ar+N₂ ratios of 0.2, 0.4, 0.6, 0.8, and 1.0. The characteristics of the c-BN layer were significantly enhanced at a nitrogen partial pressure ratio of 0.6. The highest growth rate and the lowest surface roughness were observed at this condition. The c-BN phase structure was clearly identified by the binding energy of the B1s and N1s along with X-ray diffraction patterns of the coated layer. These results indicate that the growth rate and crystal structure of the c-BN films are significantly affected under certain atmospheric gas conditions.