Published September 30, 2008 | Version v1
Journal article

Lifetime improvement of organic light-emitting diodes using silicon oxy-nitride as anode modifier

  • 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong (China)

Description

Silicon oxy-nitride (SiOxNy) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiOxNy films were deposited on the indium tin oxide (ITO) anode of an OLED with a configuration of ITO/SiOxNy/α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of the SiOxNy films, devices with improved electroluminescent performance and operation lifetime were obtained. Atomic compositions of the SiOxNy films were analyzed with X-ray photoelectron spectroscopy. The best device with the optimized SiOxNy film showed a half brightness lifetime 5 times better than that of the control device

Availability note (English)

Available from http://dx.doi.org/10.1016/j.tsf.2008.04.028

Additional details

Identifiers

DOI
10.1016/j.tsf.2008.04.028;
PII
S0040-6090(08)00421-5;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
516
Journal Issue
22
Journal Page Range
p. 8195-8198
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II
Acronym
EMRS 2007 fall meeting
Dates
17-21 Sep 2007
Place
Warsaw (Poland)

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.