Published September 30, 2008
| Version v1
Journal article
Lifetime improvement of organic light-emitting diodes using silicon oxy-nitride as anode modifier
Creators
- 1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Hong Kong (China)
Description
Silicon oxy-nitride (SiOxNy) films prepared by radio-frequency magnetron sputtering were investigated as an anode modifier in organic light-emitting diodes (OLEDs). SiOxNy films were deposited on the indium tin oxide (ITO) anode of an OLED with a configuration of ITO/SiOxNy/α-naphtylphenyliphenyl diamine (NPB)/8-hydroxyquinoline aluminum (AlQ)/Mg:Ag. By varying the argon and oxygen flow ratio during deposition of the SiOxNy films, devices with improved electroluminescent performance and operation lifetime were obtained. Atomic compositions of the SiOxNy films were analyzed with X-ray photoelectron spectroscopy. The best device with the optimized SiOxNy film showed a half brightness lifetime 5 times better than that of the control device
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2008.04.028Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2008.04.028;
- PII
- S0040-6090(08)00421-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 516
- Journal Issue
- 22
- Journal Page Range
- p. 8195-8198
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Symposium H: Current trends in optical and x-ray metrology of advanced materials and devices II
- Acronym
- EMRS 2007 fall meeting
- Dates
- 17-21 Sep 2007
- Place
- Warsaw (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40006092
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM COMPLEXES; ANODES; ARGON; DEPOSITION; ELECTROLUMINESCENCE; FILMS; INDIUM OXIDES; LIGHT EMITTING DIODES; MAGNETRONS; OXINE; PERFORMANCE; SILICON; SILICON NITRIDES; SPUTTERING; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- AROMATICS; AZAARENES; AZINES; CHALCOGENIDES; COMPLEXES; ELECTRODES; ELECTRON SPECTROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EMISSION; EQUIPMENT; FLUIDS; GASES; HETEROCYCLIC COMPOUNDS; HYDROXY COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; ORGANIC COMPOUNDS; ORGANIC NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTON EMISSION; PNICTIDES; PYRIDINES; QUINOLINES; RARE GASES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMIMETALS; SILICON COMPOUNDS; SPECTROSCOPY; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.